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Gallium Nitride (GaN) is a compound of nitrogen and gallium with specific semiconductor properties. It was used in light-emitting diodes in the early days. It belongs to the same periodic group of elements as commonly used silicon, and has high hardness, high melting point, high stability and strong stability. Gallium nitride material is an important semiconductor material for the development of microelectronic devices. It has the characteristics of wide band gap and high thermal conductivity. It can be used in chargers and can be adapted to small transformers and high-power devices, with high charging efficiency.